Calculate the diffusion parasitic Cdb of the drain of a unit-sized contacted nMOS transistor in a 0.6 R_m process when the drain is at 0 and at V_DD = 5 V. Assume the substrate is grounded. The transistor characteristics are C_J = 0.42 fF/Rm², MJ = 0.44, CJSW = 0.33 fF/Rm, MJSW = 0.12, and 0 = 0.98 V at room temperature.

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Status NEW Posted 10 May 2017 02:05 PM My Price 8.00

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