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MCS,PHD
Argosy University/ Phoniex University/
Nov-2005 - Oct-2011
Professor
Phoniex University
Oct-2001 - Nov-2016
A transistor, which may be approximated as a hemispherical heat source of radius ro = 0.1 mm, is embedded in a large silicon substrate (k = 125 W/m ∙ K) and dissipates heat at a rate q. All boundaries of the silicon are maintained at an ambient temperature of T∞= 27°C, except for the top surface, which is well insulated.
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Obtain a general expression for the substrate temperature distribution and evaluate the surface temperature of the heat source for q = 4 W.
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