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Elementary,Middle School,High School,College,University,PHD
| Teaching Since: | May 2017 |
| Last Sign in: | 399 Weeks Ago, 1 Day Ago |
| Questions Answered: | 66690 |
| Tutorials Posted: | 66688 |
MCS,PHD
Argosy University/ Phoniex University/
Nov-2005 - Oct-2011
Professor
Phoniex University
Oct-2001 - Nov-2016
1. Find the subthreshold leakage current of an inverter at room temperature if the input A = 0. Let Gn = 2Gp = 1 mA/V2, n = 1.0, and |Vt| = 0.4 V. Assume the body effect and DIBL coefficients are L = M = 0.
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2. Repeat above for a NAND gate built from unit transistors with inputs A = B = 0. Show that the subthreshold leakage current through the series transistors is half that of the inverter if n = 1.
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