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MCS,PHD
Argosy University/ Phoniex University/
Nov-2005 - Oct-2011
Professor
Phoniex University
Oct-2001 - Nov-2016
Consider an n-channel MOSFET with 20 nm thick gate oxide and uniform p-type 3 substrate doping of 1017Â cm- 3The gate work function is that ofn+ Si.
(a) What is the threshold voltage? Sketch the band diagram at threshold condition,
(b)What is the threshold voltage if a reverse bias of 1 V is applied to tile substrate? Sketch the band diagram at threshold.
(c) What is the scale length of this device and how short can the channel length be reduced to before severe short-channel effect takes place?
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