At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435V
At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435V, whereas a certain silicon diode requires a forward bias of 0.718V. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is (a) 1 (b) 5 (c) 4 × 103 (d) 8 × 103